Title :
Quasi-three-dimensional modeling of bipolar transistor characteristics
Author :
Sadovnikov, Alexei ; Roulston, David J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fDate :
11/1/1993 12:00:00 AM
Abstract :
A new approach to modeling the characteristics of a real three-dimensional bipolar transistor (BJT) is presented. It is based on the joint use of the BIPOLE program for calculating the intrinsic and emitter sidewall BJT characteristics and a special code RBCALC for calculating the two-dimensional potential distribution in the base region. The results presented show the importance of accounting for the third dimension for accurate calculation of some important BJT characteristics
Keywords :
bipolar transistors; electronic engineering computing; semiconductor device models; BIPOLE program; BJT characteristics; RBCALC; base region; bipolar transistor characteristics; emitter sidewall BJT characteristics; quasi-three-dimensional modeling; three-dimensional BJT; two-dimensional potential distribution; Bipolar transistors; Capacitance; Conductivity; Current density; Differential equations; Helium; Modems; Space charge; Voltage;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
