Title :
A complete substrate current model including band-to-band tunneling current for circuit simulation
Author :
Tanizawa, Motoaki ; Ikeda, Mikio ; Kotani, Norihiko ; Tsukamoto, Katsuhiro ; Horie, Kazuo
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
11/1/1993 12:00:00 AM
Abstract :
A simple and accurate substrate current model that is valid in the whole operation region of a MOSFET with various dimensions is presented. The theory is based on hot-carrier induced impact ionization and band-to-band tunneling (BTBT). All the parameters in the model can be assigned proper physical meanings and are easily extracted from the measurement data. The model is incorporated in a Mitsubishi Circuit Simulator (MICS). Both the accuracy and the efficiency of the model are shown by experiment and simulation, and hence make the simulator useful for designers who care about low power applications
Keywords :
circuit analysis computing; digital simulation; impact ionisation; insulated gate field effect transistors; semiconductor device models; tunnelling; MICS; MOSFET; Mitsubishi Circuit Simulator; band-to-band tunneling current; circuit simulation; hot-carrier induced impact ionization; low power applications; substrate current model; Analytical models; Circuit simulation; Data mining; Hot carriers; Impact ionization; MOS devices; MOSFET circuits; Microwave integrated circuits; Tunneling; Ultra large scale integration;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
