Title :
Device and circuit simulation of anomalous DX trap effects in DCFL and SCFL HEMT inverters
Author :
Wang, Tahui ; Wu, Sheng-Jyh ; Huang, Chimoon
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
11/1/1993 12:00:00 AM
Abstract :
An integrated device and circuit analysis has been developed to evaluate the DX trap induced anomalous transient phenomena in DCFL and SCPL AlGaAs-GaAs HEMT inverters. The slow transient effect and the hysteretic characteristics of the input-output voltage transfer function in the inverters are simulated. The result shows that in comparison with the DCFL inverter, the DX trap effects are much improved in the SCFL inverter due to its particular operational principle
Keywords :
III-V semiconductors; aluminium compounds; circuit analysis computing; digital simulation; direct coupled FET logic; electron traps; field effect integrated circuits; gallium arsenide; high electron mobility transistors; hysteresis; integrated logic circuits; logic gates; semiconductor device models; transfer functions; transient response; AlGaAs-GaAs; DCFL; HEMT inverters; SCFL; anomalous DX trap effects; device/circuit simulation integration; hysteretic characteristics; input-output voltage transfer function; integrated device/circuit analysis; slow transient effect; source-coupled FET logic; transient phenomena; Circuit simulation; Electron traps; Equations; FETs; Gallium arsenide; HEMTs; Hysteresis; Logic devices; Pulse width modulation inverters; Threshold voltage;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
