Title :
7 Gbit/s coherent pulse generation in an actively mode-locked GaAlAs diode laser
Author :
Suzuki, Yuya ; Sato, Takao
Author_Institution :
MITI, Laser Section, Radio & Opto-electronics Division, Electrotechnical Laboratory, Tsukuba, Japan
Abstract :
High-rate coherent pulse generation was demonstrated with a GaAlAs laser system by active mode-locking. Almost transform-limited pulses of about 30 ps duration are obtained at a rate of about 7 GHz.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser mode locking; semiconductor junction lasers; 7 Gbit/s coherent pulse generation; III-V semiconductor; actively mode-loaded GaAlAs diode laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820558
