Title :
Preparation and properties of monolithically integrated lenses on InGaAsP/InP light-emitting diodes
Author_Institution :
Siemens AG, Research Laboratories, Mÿnchen, West Germany
Abstract :
A simple chemical etching technique has been developed to prepare integrated lenses of the InP substrate material on InGaAsP/InP double-heterostructure Burrus-type diodes. By coupling lensed diodes with emitting regions 20 ¿m in diameter to graded-index fibres with a core diameter of 60 ¿m, an improvement in launching efficiency up to a factor of 3 compared to flat devices has been reproducibly achieved.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; integrated optics; lenses; light emitting diodes; Burrus-type diodes; III-V semiconductors; InGaAsP/InP light-emitting diodes; chemical etching technique; core; graded-index fibres; launching efficiency; monolithically integrated lenses;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820564
