• DocumentCode
    980659
  • Title

    Preparation and properties of monolithically integrated lenses on InGaAsP/InP light-emitting diodes

  • Author

    Heinen, J.

  • Author_Institution
    Siemens AG, Research Laboratories, Mÿnchen, West Germany
  • Volume
    18
  • Issue
    19
  • fYear
    1982
  • Firstpage
    831
  • Lastpage
    832
  • Abstract
    A simple chemical etching technique has been developed to prepare integrated lenses of the InP substrate material on InGaAsP/InP double-heterostructure Burrus-type diodes. By coupling lensed diodes with emitting regions 20 ¿m in diameter to graded-index fibres with a core diameter of 60 ¿m, an improvement in launching efficiency up to a factor of 3 compared to flat devices has been reproducibly achieved.
  • Keywords
    III-V semiconductors; etching; gallium arsenide; indium compounds; integrated optics; lenses; light emitting diodes; Burrus-type diodes; III-V semiconductors; InGaAsP/InP light-emitting diodes; chemical etching technique; core; graded-index fibres; launching efficiency; monolithically integrated lenses;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820564
  • Filename
    4246891
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=980659