Title :
Rapid method of determination of carrier mobility against temperature in GaAs MESFETs
Author :
Kim, B. ; Das, B.
Author_Institution :
Pennsylvania State University, Solid State Device Laboratory & Materials Research Laboratory, Department of Electrical Engineering, University Park, USA
Abstract :
A simple method of measurement for the determination of ¿ against T at fixed depths in GaAs MESFET ion-implanted layers has been devised. Typical results showing ¿ against T at different depths are presented that indicate the relative effects of both the shallow and compensating deep levels near the surface and deep in the channel.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; carrier mobility; deep levels; gallium arsenide; temperature measurement; GaAs MESFETs; III-V semiconductor; carrier mobility determination; deep levels; ion-implanted layers; temperature determination;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820574
