Title :
Ultra-low threshold, graded-index waveguide, separate confinement, CW buried-heterostructure lasers
Author :
Tsang, W.T. ; Logan, R.A. ; Ditzenberger, J.A.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
Ultra-low-threshold semiconductor diode lasers were fabricated by forming buried heterostructures from MBE-grown graded-index waveguide, separate-confinement heterostructure (GRIN-SCH) wafers. CW threshold currents as low as 2.5 mA for 250 ¿m cavity length, output power as high as 20 mW/mirror and external quantum efficiency as high as 80% were obtained.
Keywords :
molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; MBE-grown graded-index waveguide; quantum efficiency; separate confinement; ultra-low-threshold semiconductor BH diode lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820575
