• DocumentCode
    980830
  • Title

    Semicylindrical Zn-diffused stripe GaAlAs laser diodes with very low threshold currents

  • Author

    Hanamitsu, K. ; Ohsaka, S. ; Yoshida, Kenta ; Nishi, Hidetaka ; Hori, Kenji ; Takusagawa, M.

  • Author_Institution
    Fujitsu Laboratories Ltd., Kawasaki, Japan
  • Volume
    18
  • Issue
    19
  • fYear
    1982
  • Firstpage
    853
  • Lastpage
    855
  • Abstract
    Semicylindrical Zn-diffused stripe (SCD) GaAlAs lasers with a very narrow current-confining stripe and sufficient refractive-index step along the active layer are described. They have the lowest threshold current among this type of device previously reported. The devices having a 200 ¿m cavity length showed a CW threshold current of only 22 mA at 25°C and 45 mA at 105°C. Sufficient current confinement made it possible to operate at temperatures up to 165°C.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; III-V semiconductor; cavity length; refractive-index step; semicylindrical Zn-diffused stripe GaAlAs laser diodes; very low threshold currents;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820580
  • Filename
    4246914
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=980830