Title :
Semicylindrical Zn-diffused stripe GaAlAs laser diodes with very low threshold currents
Author :
Hanamitsu, K. ; Ohsaka, S. ; Yoshida, Kenta ; Nishi, Hidetaka ; Hori, Kenji ; Takusagawa, M.
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
Abstract :
Semicylindrical Zn-diffused stripe (SCD) GaAlAs lasers with a very narrow current-confining stripe and sufficient refractive-index step along the active layer are described. They have the lowest threshold current among this type of device previously reported. The devices having a 200 ¿m cavity length showed a CW threshold current of only 22 mA at 25°C and 45 mA at 105°C. Sufficient current confinement made it possible to operate at temperatures up to 165°C.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; III-V semiconductor; cavity length; refractive-index step; semicylindrical Zn-diffused stripe GaAlAs laser diodes; very low threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820580
