• DocumentCode
    980841
  • Title

    Room-temperature CW operation of 1.3 ¿m distributed-feedback GaInAsP/InP lasers

  • Author

    Uematsu, Y. ; Okuda, H. ; Kinoshita, J.

  • Author_Institution
    Toshiba Corporation, Research & Development Center, Kawasaki, Japan
  • Volume
    18
  • Issue
    20
  • fYear
    1982
  • Firstpage
    857
  • Lastpage
    858
  • Abstract
    Distributed-feedback GaInAsP/InP lasers with a low threshold current emitting at 1.3 ¿m have been successfully fabricated. A minimum CW threshold current of 66 mA was obtained at room temperature. The temperature coefficient of lasing wavelength was 1 Å/°C, which is about a fifth of that for Fabry-Perot lasers. A stable single longitudinal mode was obtained up to 52°C in a p-side-up configuration.
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; 1.3 micron laser; 52 degree C operation; DFB lasers; distributed-feedback GaInAsP/InP lasers; low threshold current; optical communications laser sources; p-side-up configuration; room temperature CW operation; semiconductor lasers; stable single longitudinal mode; temperature coefficient of lasing wavelength;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820581
  • Filename
    4246916
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=980841