Title :
High-quality InP surface corrugations for 1.55 ¿m InGaAsP DFB lasers fabricated using electron-beam lithography
Author :
Westbrook, L.D. ; Nelson, A.W. ; Dix, C.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
Second-order surface corrugations for 1.55 ¿m distributed feedback (DFB) lasers have been fabricated in InP with a high yield using electron beam exposed resist masks. Attractive features of this technique are its flexibility and variable mark/space ratio (for optimum DFB coupling strength). Diffraction experiments show these gratings to be of suitably high optical quality.
Keywords :
III-V semiconductors; diffraction gratings; electron beam lithography; gallium arsenide; laser accessories; semiconductor junction lasers; 1.55 micron laser; InGaAsP DFB lasers; InP surface corrugations; diffraction gratings; electron-beam lithography; fabrication; optical fibre communication lasers; second order surface corrugations; semiconductor junction lasers; variable mark/space ratio;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820586
