8mW 17/24 GHz dual-band CMOS low-noise amplifier for ISM-band application

Author

Jhon, H.-S. ; Song, Iickho ; Jeon, J. ; Jung, H. ; Koo, Min-Mo ; Park, Byung-Gook ; Lee, Jonah D. ; Shin, Hae-Young

Author_Institution

Dept. of Electr. & Comput. Sci. Eng., Seoul Nat. Univ., Seoul

Volume

44

Issue

23

fYear

2008

Firstpage

1353

Lastpage

1354

Abstract

A 17/24 GHz dual-band CMOS low-noise amplifier (LNA) for ISM-band application is presented. The proposed LNA employs a positive feedback transmission-line-based LC-ladder network to obtain dual-band operation and reduce power consumption. For low cost, the LNA has been fabricated using a 0.18 mum mixed-signal CMOS process. The implemented LNA shows gains of 9.2 and 12 dB, and noise figures (NF) of 5.7 and 6.4 dB at 18 and 24.5 GHz, respectively. The proposed LNA exhibits 8 mW power consumption from a 0.8 V supply and the active chip area, including pad, is about 720 times 460 mum².

Keywords

CMOS integrated circuits; ladder networks; low noise amplifiers; microwave amplifiers; microwave integrated circuits; mixed analogue-digital integrated circuits; ISM-band application; dual-band CMOS low-noise amplifier; frequency 17 GHz; frequency 18 GHz; frequency 24 GHz; frequency 24.5 GHz; gain 12 dB; gain 9.2 dB; high frequency dual-band characteristics; mixed-signal CMOS process; noise figure 5.7 dB; noise figure 6.4 dB; positive feedback transmission-line-based LC-ladder network; power 8 mW; size 0.18 mum; voltage 0.8 V;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20081963

Filename

4668397