Title :
Design-in-Reliability Approach for NBTI and Hot-Carrier Degradations in Advanced Nodes
Author :
Huard, Vincent ; Parthasarathy, C.R. ; Bravaix, Alain ; Hugel, T. ; Guérin, Chloé ; Vincent, E.
Author_Institution :
STMicroelectron., Crolles
Abstract :
A practical and accurate design-in-reliability methodology has been developed for designs on 90-65-nm technology nodes to quantitatively assess the degradation due to hot carrier and negative bias temperature instability. Simulation capability has been built on top of an existing analog simulator ELDO. Circuits are analyzed using this methodology, illustrating the capabilities of the methodology as well as highlighting the impacts of the two degradation modes.
Keywords :
hot carriers; semiconductor device reliability; design-in-reliability methodology; hot-carrier degradation; negative bias temperature instability; semiconductor device reliability; Circuit simulation; Degradation; Design methodology; Hot carriers; Human computer interaction; Negative bias temperature instability; Niobium compounds; Paper technology; Stress; Titanium compounds; Not given;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2007.911380
