• DocumentCode
    980942
  • Title

    Dual-wavelength (GaAl)As laser

  • Author

    Bouadma, N. ; Bouley, J.C. ; Riou, J.

  • Author_Institution
    Centre National d´Etudes des Télécommunications, Bagneux, France
  • Volume
    18
  • Issue
    20
  • fYear
    1982
  • Firstpage
    871
  • Lastpage
    873
  • Abstract
    A monolithic structure integrating two stripe-geometry (GaAl)As lasers emitting at 8500 and 8850 Å is described. The threshold currents for both lasers are in the 50¿70 mA range. The spacing between the stripes for the device reported here is 25 ¿m; it can be reduced to 10 ¿m in order to optimise the direct coupling to a 50 ¿m diameter fibre.
  • Keywords
    III-V semiconductors; gallium arsenide; optical communication equipment; semiconductor junction lasers; 8500 and 8850 Angstrom wavelengths; dual wavelength laser; integrating two stripe-geometry (GaAl)As lasers; monolithic structure; optical fibre communication lasers; spacing between lasers 25 micron; threshold currents;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820591
  • Filename
    4246926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=980942