Title :
High-temperature operation of 1.26 μm Fabry-Perot laser with InGaAs metamorphic buffer on GaAs substrate
Author :
Arai, Manabu ; Fujisawa, T. ; Kobayashi, Wataru ; Nakashima, Kazuto ; Yuda, M. ; Kondo, Yuta
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi
Abstract :
A 1.26 m ridge waveguide laser diode with an InGaAs metamorphic buffer on a GaAs substrate grown by metal-organic vapour-phase epitaxy has been successfully developed. This laser has achieved the highest operating temperature (173degC) for continuous-wave operation reported for a metamorphic laser.
Keywords :
Fabry-Perot resonators; III-V semiconductors; gallium arsenide; indium compounds; laser beams; ridge waveguides; semiconductor lasers; vapour phase epitaxial growth; waveguide lasers; Fabry-Perot laser; InGaAs; continuous-wave operation; metal-organic vapour-phase epitaxy; metamorphic buffer; ridge waveguide laser diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20082657
