Title :
Short-cavity GaAlAs laser by wet chemical etching
Author :
Bouadma, N. ; Riou, J. ; Bouley, J.C.
Author_Institution :
Centre National d´´Etudes des Télécommunications, Bagneux, France
Abstract :
A short-cavity (GaAl)As stripe geometry laser with a threshold current of 30 mA has been fabricated by a new chemical etch process which uses a multilayer metal mask. The laser is 23 ¿m long and 12 ¿m wide, and does not have reflective coatings on the etched facets. Quasi-single-mode operation is obtained in pulsed conditions.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; semiconductor junction lasers; semiconductor technology; GaAlAs laser; chemical etch process; fabrication; multilayer metal mask; pulsed conditions; quasi-single-mode operation; semiconductor junction lasers; semiconductor technology; short-cavity (GaAl)As stripe geometry laser; threshold current; wet chemical etching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820596
