Title :
Rectifying GaAs-GaAlAs-GaAs structures by MOCVD compositional grading
Author :
Escobosa, A. ; Kr¿¿utle, H. ; Beneking, H.
Author_Institution :
Technical University of Aachen, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
Several graded bandgap structures have been fabricated by metalorganic vapour deposition using the GaAs-Ga1¿xAlxAs-GaAs system with constant n-type doping and x varying with position. The I/V characteristics show the expected nonsymmetrical and nonlinear behaviour.
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; p-n heterojunctions; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; GaAs-Ga1-xAlxAs-GaAs system; I/V characteristics; MOCVD compositional grading; graded bandgap structures; metalorganic chemical vapour deposition; nonlinear behaviour; nonsymmetrical behaviour; p-n heterojunctions; rectifying structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820602
