Title :
Electronic diffusion and directional order in the magnetic semiconductor HgCr2Se4
Author :
Merceron, T. ; Porte, M.
Author_Institution :
Centre National de Recherche Scientifique, Meudon-Bellevue, France
fDate :
5/1/1981 12:00:00 AM
Abstract :
The existence of a directional order has been shown in a HgCr2Se4single crystal reheated with Hg atmosphere, by measuring the magnetic aftereffect and the anisotropy. The directional order is attributed to an electron migration between Cr2+and Cr3+on B sites; the n-type carriers created by the thermal treatment with Hg are shown to be mostly due to the Cr2+ions formed during the treatment.
Keywords :
Charge carrier processes; Magnetic semiconductor materials/devices; Electrons; Frequency; Magnetic anisotropy; Magnetic materials; Magnetic semiconductors; Mercury (metals); Permeability; Perpendicular magnetic anisotropy; Temperature; Toroidal magnetic fields;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1981.1061198
