DocumentCode
981101
Title
Skin Effect in Semiconductors
Author
Frei, A.H. ; Strutt, M.J.O.
Author_Institution
David Sarnoff Research Center, RCA Labs., Princeton, N.J.
Volume
48
Issue
7
fYear
1960
fDate
7/1/1960 12:00:00 AM
Firstpage
1272
Lastpage
1277
Abstract
This paper deals with the theory of skin effect in semiconductor materials including the effect of displacement currents, which are generally neglected in the skin-effect theory for metallic conductors. In the case of flat plates, formulas are derived for the field distribution, the impedance and the eddy-current power losses, considering symmetrical electric as well as magnetic fields. Impedance as a function of frequency is measured for germanium in the microwave cm-range. The measured values agree with the theoretical results. The equivalent depth of penetration is calculated and compared with the skin depth for metals. All theoretical results are represented in graphs for different values of the ratio ¿, i.e., the displacement current divided by the conduction current. The formulas are extended to the case of complex permeability, corresponding to hysteresis.
Keywords
Conducting materials; Frequency measurement; Germanium; Impedance measurement; Magnetic field measurement; Magnetic hysteresis; Microwave measurements; Permeability; Semiconductor materials; Skin effect;
fLanguage
English
Journal_Title
Proceedings of the IRE
Publisher
ieee
ISSN
0096-8390
Type
jour
DOI
10.1109/JRPROC.1960.287649
Filename
4066170
Link To Document