• DocumentCode
    981101
  • Title

    Skin Effect in Semiconductors

  • Author

    Frei, A.H. ; Strutt, M.J.O.

  • Author_Institution
    David Sarnoff Research Center, RCA Labs., Princeton, N.J.
  • Volume
    48
  • Issue
    7
  • fYear
    1960
  • fDate
    7/1/1960 12:00:00 AM
  • Firstpage
    1272
  • Lastpage
    1277
  • Abstract
    This paper deals with the theory of skin effect in semiconductor materials including the effect of displacement currents, which are generally neglected in the skin-effect theory for metallic conductors. In the case of flat plates, formulas are derived for the field distribution, the impedance and the eddy-current power losses, considering symmetrical electric as well as magnetic fields. Impedance as a function of frequency is measured for germanium in the microwave cm-range. The measured values agree with the theoretical results. The equivalent depth of penetration is calculated and compared with the skin depth for metals. All theoretical results are represented in graphs for different values of the ratio ¿, i.e., the displacement current divided by the conduction current. The formulas are extended to the case of complex permeability, corresponding to hysteresis.
  • Keywords
    Conducting materials; Frequency measurement; Germanium; Impedance measurement; Magnetic field measurement; Magnetic hysteresis; Microwave measurements; Permeability; Semiconductor materials; Skin effect;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1960.287649
  • Filename
    4066170