Application of lightly doped drain structure to AIGaN/GaN HEMTs by ion implantation technique

AlGaN/GaN high electron mobility transistors (HEMTs) with lightly doped drain (LDD) structures were fabricated using an Si ion implantation technique. The HEMTs show an obvious merit of enhancement of on-state breakdown voltage (V _br) of as high as 180 V, where that of a reference device without the LDD structure was 130 V. We also confirmed that resistance values at heavily doped drain regions were not changed by the introduction of the LDD structure.