• DocumentCode
    981301
  • Title

    Gallium-Arsenide Tunnel Diodes

  • Author

    Holonyak, N., Jr. ; Lesk, I.A.

  • Author_Institution
    General Electric Co., Electronics Park, Syracuse, N.Y.
  • Volume
    48
  • Issue
    8
  • fYear
    1960
  • Firstpage
    1405
  • Lastpage
    1409
  • Abstract
    The fabrication and properties of GaAs tunnel diodes are described. The material preparation is discussed; devices are described which have been fabricated consistently with peak to valley current ratios > 15:1, with voltage swings in the range from 0.9 to 1.2, and with current densities from 2000 amp/cm2 to over 10,000 amp/cm2 (and with correspondingly low capacitances, e.g., capacitances as low as 0.2 ¿¿f/ma and g/C figures of merit as high as 5×1010 sec-1). The temperature behavior of typical units is presented. Applications particularly well suited to GaAs units are mentioned.
  • Keywords
    Capacitance; Fabrication; Gallium arsenide; Germanium; Intermetallic; Materials preparation; Semiconductor diodes; Silicon; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1960.287545
  • Filename
    4066191
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=981301