Title :
Dielectric guiding due to an inverted gain profile in GaAs/GaAlAs lasers
Author :
Brosson, P. ; Manganote, E.J.T. ; Prince, F.C.
Author_Institution :
UNICAMP, Laboratorio de Pesquisa em Dispositivos, Campinas, Brazil
Abstract :
The waveguiding mechanism in a new GaAs/GaAlAs laser structure has been investigated by near-field and astigmatism measurements. The waist of the beam was observed in front of the mirror facet of the laser, indicating that the inverted gain profile is responsible for dielectric guiding along the junction plane.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; semiconductor junction lasers; GaAs/GaAlAs lasers; astigmatism measurements; beam waist; built-in refractive index step; dielectric waveguiding mechanism; inverted gain profile; junction plane; near field measurement; semiconductor laser; transverse mode properties;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820635
