Title :
Selected-area molecular beam epitaxy on ion-implanted GaAs substrates
Author :
Favennec, P.N. ; Henry, Leanne ; Regreny, A. ; Salvi, M.
Author_Institution :
Centre National d´Etudes des Télécommunications, LAB/ICM, Lannion, France
Abstract :
We present a method of selective growth of GaAs which utilises ion implantation for defining conductive monocrystalline and high-resistivity nonmonocrystalline regions on a GaAs substrate. By molecular beam epitaxy, nonmonocrystalline GaAs is obtained on the implanted areas of the GaAs substrate. Selected area molecular beam epitaxy is performed directly on an unmasked substrate.
Keywords :
III-V semiconductors; gallium arsenide; ion implantation; molecular beam epitaxial growth; semiconductor growth; GaAs; MBE; ion implantation; ion-implanted GaAs substrates; molecular beam epitaxy; nonmonocrystalline GaAs; selective growth; semiconductor growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820636
