Title :
High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers
Author :
Matsushima, Y. ; Akiba, Shigeyuki ; Sakai, Kenji ; Kushiro, Y. ; Noda, Yasuo ; Utaka, K.
Author_Institution :
KDD Research & Development Laboratories, Tokyo, Japan
Abstract :
The optical response time of an InGaAs/InP heterostructure avalanche photodiode (HAPD) with InGaAsP buffer layers is reported. It is shown that the buffer layers play an important role in reduction of the pile-up effect and are considered to be effective in achieving high-speed InGaAs/InP HAPDs.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; optical communication equipment; InGaAs/InP heterostructure avalanche photodiode; InGaAsP buffer layers; optical communication equipment; optical response time; pile-up effect;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820649
