Title :
Double-channel planar buried-heterostructure laser diode with effective current confinement
Author :
Mito, I. ; Kitamura, Masayuki ; Kobayashi, Ke. ; Kobayashi, Ko.
Author_Institution :
Nippon Electric Co. Ltd., Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
An InGaAsP double-channel planar buried-heterostructure laser diode has been developed in which a p-n-p-n current confinement structure effectively reduces the leakage current. High-power operation over 50 mW and high-temperature operation up to 130°C have been attained.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; 1.3 micron wavelength; BH laser diode; InGaAsP laser diode; buried-heterostructure laser diode; double channel planar laser diode; effective current confinement; high power operation; high-temperature operation; leakage current; optical communication; p-n-p-n current confinement structure; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820655
