Title :
Effect of semiconductor laser phase noise on BER performance in an optical DPSK heterodyne-type experiment
Author :
Favre, F. ; Le Guen, D.
Author_Institution :
CNET, LAB/MER/FOG, Lannion, France
Abstract :
We report the first experimental investigation of the effect of laser-diode phase noise on the error-rate performance in a PSK heterodyne differential detection fibre communication experiment. A newly designed AlGaAs laser emitter with adjustable linewidth is used as both the signal carrier and the local oscillator. Error rate is measured for 25 Mbit/s and 50 Mbit/s signals at an intermediate frequency of 250 MHz, and a BER (bit error rate) of 10¿10 has been achieved.
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; error statistics; gallium arsenide; optical communication; optical communication equipment; phase shift keying; semiconductor junction lasers; 25 Mbit/s; 50 Mbit/s; AlGaAs laser emitter; BER performance; bit error rate; error-rate performance; fibre communication experiment; optical DPSK heterodyne-type experiment; semiconductor laser phase noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820662
