Title :
Locking bandwidth asymmetry in injection-locked GaAlAs lasers
Author :
Goldberg, L. ; Taylor, H.F. ; Weller, J.F.
Author_Institution :
Naval Research Laboratory, Department of the Navy, Washington, USA
Abstract :
The centre of the locking frequency range of a GaAlAs laser is found to shift to longer wavelengths with increasing injected power by an amount proportional to the square root of the injected power level. These observations are in good agreement with predictions based on an analysis relating equilibrium photon and carrier densities in the laser cavity.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser mode locking; semiconductor junction lasers; carrier densities; equilibrium photon density; injection-locked GaAlAs lasers; laser cavity; locking bandwidth asymmetry; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820674
