Title :
New 1.5 ¿m wavelength GaInAsp/InP distributed feedback laser
Author :
Itaya, Y. ; Matsuoka, T. ; Nakano, Yoshiaki ; Suzuki, Yuya ; Kuroiwa, Koki ; Ikegami, Tomoaki
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
A new 1.5 ¿m-wavelength GalnAsP/InP distributed feedback buried-heterostructure laser was fabricated by a three-step LPE growth process. The second-order corrugation grating was formed on the waveguide layer grown on the active layer. High differential quantum efficiency of 13%/facet was obtained. Single-longitudinal-mode operation in the temperature range from ¿20°C to 55°C was obtained.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; semiconductor epitaxial layers; semiconductor junction lasers; -20Degrees C to 55Degrees C; 1.5 microns wavelength; GaInAsP/InP distributed feedback laser; active layer; buried-heterostructure laser; differential quantum efficiency; second-order corrugation grating; semiconductor laser; single longitudinal mode operation; three-step LPE growth process; waveguide layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820689
