• DocumentCode
    981932
  • Title

    New 1.5 ¿m wavelength GaInAsp/InP distributed feedback laser

  • Author

    Itaya, Y. ; Matsuoka, T. ; Nakano, Yoshiaki ; Suzuki, Yuya ; Kuroiwa, Koki ; Ikegami, Tomoaki

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    18
  • Issue
    23
  • fYear
    1982
  • Firstpage
    1006
  • Lastpage
    1008
  • Abstract
    A new 1.5 ¿m-wavelength GalnAsP/InP distributed feedback buried-heterostructure laser was fabricated by a three-step LPE growth process. The second-order corrugation grating was formed on the waveguide layer grown on the active layer. High differential quantum efficiency of 13%/facet was obtained. Single-longitudinal-mode operation in the temperature range from ¿20°C to 55°C was obtained.
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; semiconductor epitaxial layers; semiconductor junction lasers; -20Degrees C to 55Degrees C; 1.5 microns wavelength; GaInAsP/InP distributed feedback laser; active layer; buried-heterostructure laser; differential quantum efficiency; second-order corrugation grating; semiconductor laser; single longitudinal mode operation; three-step LPE growth process; waveguide layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820689
  • Filename
    4247039
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=981932