• DocumentCode
    981983
  • Title

    780 nm oxidised vertical-cavity surface-emitting lasers with Al0.11Ga0.89As quantum wells

  • Author

    Shin, Jae-Hwan ; Kim, T. ; Lee, E.-K. ; Kim, Inna ; Lee, Young-Hyun

  • Volume
    32
  • Issue
    14
  • fYear
    1996
  • fDate
    7/4/1996 12:00:00 AM
  • Firstpage
    1287
  • Lastpage
    1288
  • Abstract
    Low threshold vertical-cavity surface-emitting lasers with Al0.11Ga0.89As four quantum wells for 780 nm wavelength emission are fabricated using aluminum oxide apertures. The fabrication process requires only single step mask alignment. The 3.4 μm square laser exhibits a low threshold current of 200 μA, which is more than an order of magnitude smaller than the previous values obtained at 780 nm. Singlemode peak output power is 1.1 mW. This 3.4 μm laser is found to operate in the fundamental transverse mode over the complete operating current range. The 7.6 μm square laser shows peak output power of 2.7 mW
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; optical fabrication; oxidation; quantum well lasers; surface emitting lasers; 1.1 mW; 2.7 mW; 200 muA; 3.4 micron; 7.6 micron; 780 nm; Al0.11Ga0.89As; Al0.11Ga0.89As quantum wells; aluminum oxide apertures; fabrication; fundamental transverse mode; oxidised vertical-cavity surface-emitting lasers; single mode peak output power; single step mask alignment; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960833
  • Filename
    503628