DocumentCode :
982083
Title :
Optoelectronic integrated circuits
Author :
Forrest, Stephen R.
Author_Institution :
University of South California, Los Angeles, CA, USA
Volume :
75
Issue :
11
fYear :
1987
Firstpage :
1488
Lastpage :
1497
Abstract :
Monolithic integration of photonic devices such as lasers, modulators, and photodetectors, along with their associated electronic circuitry, has recently made significant advances such that high performance is now being achieved in devices using both the GaAs and InP materials systems. The advances in these optoelectronic integrated circuits, or OEICs, are being driven by the needs of second-generation photonic systems including optical interconnects, optical computing and signal processing, and communications. Furthermore, the pace of the technology is being set by the improvements made in semiconductor materials growth using such methods as molecular beam and vapor phase epitaxies. In this paper we discuss the needs of several generic photonic systems for advanced optoelectronic chips. These needs are now being met by the fabrication of high-performance and highly functional integrated transmitters, receivers, modulators, and arrays of such devices. We discuss examples of these and other archetype integrated circuits which serve to illustrate the advances in, and challenges to this new device technology. Finally, a brief description is given of the materials growth techniques which are used in OEIC structures.
Keywords :
Gallium arsenide; Indium phosphide; Integrated circuit technology; Monolithic integrated circuits; Optical interconnections; Optical materials; Optical modulation; Photodetectors; Photonic integrated circuits; Semiconductor materials;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1987.13910
Filename :
1458177
Link To Document :
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