Title :
Structural dependence of 1.3 μm narrow beam lasers fabricated by selective MOCVD
Author :
Kasukawa, A. ; Yamanaka, N. ; Iwai, N. ; Nakahira, Yoshihiro ; Yokouchi, N.
Author_Institution :
Yokohama R&D Labs., Furukawa Electr. Co. Ltd., Yokohama
fDate :
7/4/1996 12:00:00 AM
Abstract :
Lasing characteristics of 1.3 μm narrow beam lasers have been investigated in terms of the energy separation between gain and waveguide regions simultaneously formed by selective MOCVD. The HR-coated lasers with a large energy separation of 110 meV exhibit a low threshold current of 12 mA, a high power of >50 mW, and a high temperature of 120°C with narrow beam divergence of 11° (horizontal) and 11° (vertical)
Keywords :
chemical vapour deposition; quantum well lasers; semiconductor growth; 1.3 mum; 12 mA; 120 degC; HR-coated lasers; energy separation; gain region; lasing characteristics; narrow beam divergence; narrow beam lasers; quantum well lasers; selective MOCVD; threshold current; waveguide region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960847
