• DocumentCode
    982121
  • Title

    InGaAs enhancement-mode MISFETs using double-layer gate insulator

  • Author

    Ishii, Kazuki ; Sawada, Tsuyoshi ; Ohno, Hideo ; Hasegawa, Hiroshi

  • Author_Institution
    Hokkaido University, Department of Electrical Engineering, Faculty of Engineering, Sapporo, Japan
  • Volume
    18
  • Issue
    24
  • fYear
    1982
  • Firstpage
    1034
  • Lastpage
    1036
  • Abstract
    In this letter we describe the fabrication of enhancement-mode MISFETs on InGaAs grown by liquid-phase epitaxy (LPE) using an anodic Al2O3/anodic native oxide double layer as a gate insulator. The normally-off device of 10 ¿m gate length shows the effective channel mobility of 1400 cm2/Vs. The interface state density distribution of this double-layer MIS of InGaAs is also reported. The density of 2 × 1013 cm¿2 eV¿1 at Ec ¿0.057 eV and the minimum of 8 × 1011 cm¿2 eV¿1 near midgap are measured from C/V characteristics.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; insulated gate field effect transistors; interface electron states; liquid phase epitaxial growth; III-V semiconductor; InGaAs enhancement-mode MISFET; anodic Al2O3/anodic native oxide double layer; double-layer gate insulator; effective channel mobility; fabrication; interface state density distribution; liquid-phase epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820708
  • Filename
    4247063
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=982121