• DocumentCode
    982140
  • Title

    Enhancement of resist plasma erosion rates by electron-beam hardening

  • Author

    Morgan, R.A. ; Pollard, C.J.

  • Author_Institution
    British Telecom Research Laboratories, Microelectronics Division, Ipswich, UK
  • Volume
    18
  • Issue
    24
  • fYear
    1982
  • Firstpage
    1038
  • Lastpage
    1040
  • Abstract
    A nonthermal method of hardening positive photoresists by means of a scanned high-energy electron beam in preference to direct resist heating is described. It has been established that moderate electron doses produce significant resist cross-linking without flow. Plasma etch resistance can be enhanced in the resists with no degradation of the as-developed line profile.
  • Keywords
    electron beam applications; integrated circuit technology; photoresists; sputter etching; direct resist heating; electron-beam hardening; integrated circuit technology; nonthermal method; positive photoresists; resist plasma erosion;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820710
  • Filename
    4247067
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=982140