GaInAsSb-AlGaAsSb tapered lasers emitting at 2 mu m

Author

Choi, H.K. ; Walpole, J.N. ; Turner, G.W. ; Eglash, S.J. ; Missaggia, L.J. ; Conners, M.K.

Author_Institution

Lincoln Lab., MIT, Lexington, MA, USA

Volume

5

Issue

10

fYear

1993

Firstpage

1117

Lastpage

1119

Abstract

Tapered oscillators fabricated from GaInAsSb-AlGaAsSb quantum-well structure are reported for the first time. The quantum-well laser structure, grown by molecular beam epitaxy, has broad-stripe pulsed threshold current densities as low as 330 A/cm/sup 2/ at room temperature. One tapered laser emitting at 2.02 mu m has exhibited continuous wave (CW) output power up to 750 mW, with power in the near-diffraction-limited central lobe as high as 200 mW.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium antimonide; indium compounds; laser transitions; molecular beam epitaxial growth; semiconductor lasers; 2 micron; 2.02 micron; 200 mW; 750 mW; GaInAsSb-AlGaAsSb; GaInAsSb-AlGaAsSb tapered lasers; broad-stripe pulsed threshold current densities; continuous wave (CW) output power; molecular beam epitaxy; near-diffraction-Limited central lobe; power; quantum-well structure; room temperature; tapered oscillators; Gas lasers; Laboratories; Laser beams; Laser radar; Oscillators; Power amplifiers; Power generation; Power lasers; Quantum well lasers; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.248399

Filename

248399