Title :
Optical gain measurements of 1.3 ¿m In1¿xGaxAsyP1¿yAs function of injected current density
Author :
Prince, F.C. ; Mattos, T.J.S. ; Patel, N.B.
Author_Institution :
Centro de Pesquisa e Desenvolvimento da Telebrás¿DCM, Campinas, Brazil
Abstract :
We have measured the gain coefficient of 1.3 ¿m InGaAsP as a function of injected current density by measuring the spectra of amplified spontaneous emission as a function of excited length, using a laser device in which the p contact was divided into eight segments that can be pumped independently. We found a linear behaviour of the gain peak against injected current density up to gain values of 180 cm¿1.
Keywords :
III-V semiconductors; gain measurement; gallium arsenide; indium compounds; optical variables measurement; semiconductor junction lasers; 1.3 micron; III-V semiconductor; In1-xGaxAsyP1-y DH lasers; amplified spontaneous emission; injected current density; laser pumping; optical gain measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820720
