DocumentCode
982259
Title
Continuous HEMT model for SPICE
Author
Qu, Gang ; Parker, Anthony
Author_Institution
Macquarie Univ., North Ryde, NSW
Volume
32
Issue
14
fYear
1996
fDate
7/4/1996 12:00:00 AM
Firstpage
1321
Lastpage
1323
Abstract
An HEMT model, suitable for SPICE, combines the linear, saturation, and subthreshold modes with a single smooth description. The new model features high order continuity for accurate prediction of current-voltage characteristics, gain, and distortion. This is demonstrated by comparison with measurement
Keywords
SPICE; characteristics measurement; high electron mobility transistors; semiconductor device models; SPICE; continuous HEMT model; current-voltage characteristics; distortion; gain; high order continuity; linear modes; saturation modes; single smooth description; subthreshold modes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19960875
Filename
503651
Link To Document