Title :
Continuous HEMT model for SPICE
Author :
Qu, Gang ; Parker, Anthony
Author_Institution :
Macquarie Univ., North Ryde, NSW
fDate :
7/4/1996 12:00:00 AM
Abstract :
An HEMT model, suitable for SPICE, combines the linear, saturation, and subthreshold modes with a single smooth description. The new model features high order continuity for accurate prediction of current-voltage characteristics, gain, and distortion. This is demonstrated by comparison with measurement
Keywords :
SPICE; characteristics measurement; high electron mobility transistors; semiconductor device models; SPICE; continuous HEMT model; current-voltage characteristics; distortion; gain; high order continuity; linear modes; saturation modes; single smooth description; subthreshold modes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960875
