Title :
High-frequency GaInAsP/InP laser mesas in (-110) direction with thick semi-insulating InP:Fe
Author :
Lourdudoss, S. ; Kjebon, O. ; Wallin, J. ; Lindgren, S.
Author_Institution :
Swedish Inst. of Microelectron., Kista, Sweden
Abstract :
Growth of thick semi-insulating InP:Fe (Si-InP:Fe) current-blocking layers to reduce parasitic capacitance around (-110) directional laser mesas has been demonstrated for the first time. The regrowth is found to be equivalent to that around the normally used
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; (-110) direction; 17 GHz; GaInAsP-InP; LP-MOVPE; Si-InP:Fe; current-blocking layers; high-frequency GaInAsP/InP laser mesas; high-frequency buried-heterostructure lasers; modulation bandwidth; optoelectronic integration; parasitic capacitance; regrowth; thick semi-insulating InP:Fe; Diode lasers; Electron emission; Gas lasers; Indium phosphide; Molecular beam epitaxial growth; Optical amplifiers; Semiconductor optical amplifiers; Stimulated emission; Surface emitting lasers; Temperature distribution;
Journal_Title :
Photonics Technology Letters, IEEE
