Title :
High performance GaN linear array
Author :
Huang, Z.C. ; Chen, J.C. ; Mott, D.B. ; Shu, P.K.
Author_Institution :
Hughes STX Corp., Greenbelt, MD
fDate :
7/4/1996 12:00:00 AM
Abstract :
A 1×16 GaN linear array is reported using a metal-semiconductor-metal structure. The array showed a very high responsivity of 3250 A/W at 360 nm under an applied bias of 10 V, and a response time of 0.5±0.2 ms. The responsivity has more than three orders of magnitude difference between the UV region and the visible region. The array also shows a very good uniformity
Keywords :
III-V semiconductors; gallium compounds; metal-semiconductor-metal structures; photodetectors; ultraviolet detectors; 0.3 to 0.7 ms; 10 V; 360 nm; GaN; UV region; applied bias; linear array; metal-semiconductor-metal structure; photodetectors; response time; responsivity; uniformity; visible region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960868
