• DocumentCode
    982299
  • Title

    RC hardened FPGA configuration SRAM cell design

  • Author

    Wang, W.

  • Author_Institution
    Electr. Eng. & Comput. Sci. Dept., Univ. of Wisconsin-Milwaukee, WI, USA
  • Volume
    40
  • Issue
    9
  • fYear
    2004
  • fDate
    4/29/2004 12:00:00 AM
  • Firstpage
    525
  • Lastpage
    526
  • Abstract
    A radiation hardened configuration bit cell design is proposed for an SRAM-based FPGA used in space application. The p-type gate poly on p-substrate structure provides a radiation immune resistor and a capacitor for RC hardened signal path. In addition to area efficiency, the proposed cell also overcomes the traditional linear energy transfer sensitivity to process and temperature variation.
  • Keywords
    SRAM chips; field programmable gate arrays; radiation hardening (electronics); RC hardened FPGA configuration; RC hardened signal path; SRAM cell design; bit cell design; linear energy transfer sensitivity; p-substrate structure; p-type poly gate; radiation hardened configuration; radiation immune capacitor; radiation immune resistor; space application; temperature variation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20040360
  • Filename
    1296969
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=982299