Title :
RC hardened FPGA configuration SRAM cell design
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Univ. of Wisconsin-Milwaukee, WI, USA
fDate :
4/29/2004 12:00:00 AM
Abstract :
A radiation hardened configuration bit cell design is proposed for an SRAM-based FPGA used in space application. The p-type gate poly on p-substrate structure provides a radiation immune resistor and a capacitor for RC hardened signal path. In addition to area efficiency, the proposed cell also overcomes the traditional linear energy transfer sensitivity to process and temperature variation.
Keywords :
SRAM chips; field programmable gate arrays; radiation hardening (electronics); RC hardened FPGA configuration; RC hardened signal path; SRAM cell design; bit cell design; linear energy transfer sensitivity; p-substrate structure; p-type poly gate; radiation hardened configuration; radiation immune capacitor; radiation immune resistor; space application; temperature variation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040360
