DocumentCode
982350
Title
Semiconductor surface studies with SAW-oscillator structures
Author
Rademeyer, R. ; Davari, B. ; Das, P.
Author_Institution
Rensselaer Polytechnic Institute, Electrical, Computer & Systems Engineering Department, Troy, USA
Volume
18
Issue
25
fYear
1982
Firstpage
1065
Lastpage
1066
Abstract
A new method is described whereby the surface charge against surface potential of an oxidised semiconductor sample can be obtained by measuring the frequency shift of a SAW delay-line oscillator. In this method a direct voltage is applied across the semiconductor with different configurations. The SAW delay line is made on LiNbO3 and is designed to oscillate (at 100 MHz) with a wideband amplifier in a feedback configuration.
Keywords
delay lines; oscillators; surface acoustic wave devices; surface potential; 100 MHz; LiNbO3; SAW-oscillator structures; delay-line oscillator; feedback; frequency shift; semiconductor surface charge; surface potential; wideband amplifier;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820729
Filename
4247092
Link To Document