Title :
Semiconductor surface studies with SAW-oscillator structures
Author :
Rademeyer, R. ; Davari, B. ; Das, P.
Author_Institution :
Rensselaer Polytechnic Institute, Electrical, Computer & Systems Engineering Department, Troy, USA
Abstract :
A new method is described whereby the surface charge against surface potential of an oxidised semiconductor sample can be obtained by measuring the frequency shift of a SAW delay-line oscillator. In this method a direct voltage is applied across the semiconductor with different configurations. The SAW delay line is made on LiNbO3 and is designed to oscillate (at 100 MHz) with a wideband amplifier in a feedback configuration.
Keywords :
delay lines; oscillators; surface acoustic wave devices; surface potential; 100 MHz; LiNbO3; SAW-oscillator structures; delay-line oscillator; feedback; frequency shift; semiconductor surface charge; surface potential; wideband amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820729
