Title :
Monte Carlo simulation of GaAs submicron n+-n-n+ diode with GaAlAs heterojunction cathode
Author :
Tomizawa, Keiichi ; Awano, Yuji ; Hashizume, Nobuya ; Suzuki, F.
Author_Institution :
Electrotechnical Laboratory, Tsukuba, Japan
Abstract :
A Monte Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with a Ga1¿xAlxAs heterojunction cathode. It is shown that the hot electron injection through the heterojunction cathode is effective to increase the mean electron velocity of carriers.
Keywords :
III-V semiconductors; Monte Carlo methods; electron mobility; gallium arsenide; p-n heterojunctions; semiconductor diodes; GaAlAs heterojunction cathode; GaAs submicron n+-n-n+ diode; III-V semiconductor; Monte Carlo simulation; hot electron injection; mean electron velocity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820731
