Title :
CW operation of monolithic arrays of surface-emitting AlGaAs diode lasers with dry-etched vertical facets and parabolic deflecting mirrors
Author :
Donnelly, J.P. ; Goodhue, W.D. ; Wang, C.A. ; Bailey, R.J. ; Lincoln, G.A. ; Johnson, G.D. ; Missaggia, L.J. ; Walpole, J.N.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
A monolithic two-dimensional array of surface-emitting AlGaAs diode lasers with dry-etched vertical facets and parabolic deflecting mirrors was mounted junction-side up on a W/Cu microchannel heatsink and evaluated under continuous-wave (CW) operating conditions. Both the facets and parabolic deflecting mirrors were etched using chlorine ion-beam-assisted etching. Threshold current densities of different sections of the array were consistently around 240 A/cm/sup 2/, and measured CW differential quantum efficiencies were in the 46-48% range. CW power densities as high as 148 W/cm/sup 2/ were achieved with an average temperature rise of less than 25 degrees C in this junction-side-up configuration.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; laser accessories; mirrors; semiconductor laser arrays; 2D laser diode arrays; 46 to 48 percent; AlGaAs; AlGaAs diode lasers; CW differential quantum efficiencies; CW operation; CW power densities; W-Cu; W/Cu microchannel heatsink; average temperature rise; dry-etched vertical facets; ion-beam-assisted etching; junction-side up; monolithic arrays; parabolic deflecting mirrors; surface-emitting; threshold current densities; two-dimensional array; Current measurement; Density measurement; Diode lasers; Etching; Microchannel; Mirrors; Optical arrays; Semiconductor laser arrays; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
