Title :
Changes in photovoltaic and dark electrical properties of hydrogenated amorphous silicon diodes induced by forward bias carrier injection
Author :
Sakata, Ichiro ; Hayashi, Yasuhiro
Author_Institution :
Electrotechnical Laboratory, Semiconductor Device Section, Tsukuba, Japan
Abstract :
The photovoltaic and dark electrical properties of hydrogenated amorphous silicon diodes were changed by forward bias carrier injection for several hours. These changes were similar to photoinduced (PI) changes previously reported, and this result supports previous explanations for PI changes. The differences between these two types of change are also discussed.
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; photodiodes; photovoltaic effects; silicon; a-Si:H diodes; amorphous semiconductors; dark electrical properties; forward bias carrier injection; photoinduced changes; photovoltaic properties;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820736
