• DocumentCode
    982429
  • Title

    Changes in photovoltaic and dark electrical properties of hydrogenated amorphous silicon diodes induced by forward bias carrier injection

  • Author

    Sakata, Ichiro ; Hayashi, Yasuhiro

  • Author_Institution
    Electrotechnical Laboratory, Semiconductor Device Section, Tsukuba, Japan
  • Volume
    18
  • Issue
    25
  • fYear
    1982
  • Firstpage
    1075
  • Lastpage
    1076
  • Abstract
    The photovoltaic and dark electrical properties of hydrogenated amorphous silicon diodes were changed by forward bias carrier injection for several hours. These changes were similar to photoinduced (PI) changes previously reported, and this result supports previous explanations for PI changes. The differences between these two types of change are also discussed.
  • Keywords
    amorphous semiconductors; elemental semiconductors; hydrogen; photodiodes; photovoltaic effects; silicon; a-Si:H diodes; amorphous semiconductors; dark electrical properties; forward bias carrier injection; photoinduced changes; photovoltaic properties;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820736
  • Filename
    4247100
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=982429