Title :
High-mobility selectively doped GaAs/GaAlAs structures grown by low-pressure OM-VPE
Author :
Hersee, S.D. ; Hirtz, J.P. ; Baldy, M. ; Duchemin, J.P.
Author_Institution :
Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
Abstract :
We report the growth of high-quality selectively doped GaAs/GaAlAs heterostructures grown by OM-VPE. Electron mobilities as high as 162000 cm2V¿1s¿1 have been obtained at 2 K. The sheet carrier concentration was varied between 5 × 1011 cm¿2 and 1.5 × 1012 cm¿2 by changing the `spacer¿ thickness and the doping level in the n-type GaAlAs.
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; p-n heterojunctions; vapour phase epitaxial growth; III-V semiconductor; OM-VPE growth; electron mobility; high mobility selectively doped GaAs-GaAlAs heterostructures; sheet carrier concentration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820737
