Title :
Additional wavelength shift of peak gain due to inhomogeneous distributions of carriers inside semiconductor lasers
Author :
Wang, J. ; Chen, Jiann-Jong ; Hao, Y. ; Lu, Y.
Author_Institution :
Heilongjiang Commercial Coll., Harbin, China
Abstract :
According to the traveling wave rate equations, the carrier density inside a semiconductor laser is position dependent. This will introduce an additional wavelength shift for the radiation that experiences the largest gain. Analysis has led to the establishment of the relationship between the shift and the mean square deviation of the carrier density from its mean. Calculations show that under certain circumstances the shift may approach the order of 10/sup -1/ nm.<>
Keywords :
carrier density; laser theory; semiconductor lasers; carrier density; carrier distribution; inhomogeneous distributions; mean square deviation; peak gain; position dependent; radiation; semiconductor lasers; traveling wave rate equations; wavelength shift; Carrier confinement; Charge carrier density; Councils; Diode lasers; Equations; P-n junctions; Reflectivity; Semiconductor diodes; Semiconductor lasers; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
