Additional wavelength shift of peak gain due to inhomogeneous distributions of carriers inside semiconductor lasers

According to the traveling wave rate equations, the carrier density inside a semiconductor laser is position dependent. This will introduce an additional wavelength shift for the radiation that experiences the largest gain. Analysis has led to the establishment of the relationship between the shift and the mean square deviation of the carrier density from its mean. Calculations show that under certain circumstances the shift may approach the order of 10/sup -1/ nm.<>