• DocumentCode
    982471
  • Title

    Contact resistance of polysilicon silicon interconnections

  • Author

    Reeves, Geoffrey K. ; Harrison, H.B.

  • Author_Institution
    Telecom Australia Research Laboratories, Clayton, Australia
  • Volume
    18
  • Issue
    25
  • fYear
    1982
  • Firstpage
    1083
  • Lastpage
    1085
  • Abstract
    Electrical contacts to poly are an important part of current silicon technology. In this letter we present a method of calculating the electrical characteristics for a planar poly to silicon contact. An interesting and significant result that is derived and discussed is a minimum contact resistance that is a strong function not only of the specific contact resistance of the contact interface but also of the contact geometry.
  • Keywords
    contact resistance; electrical contacts; elemental semiconductors; integrated circuit technology; large scale integration; silicon; VLSI; contact resistance; electrical contacts; integrated circuit technology; poly Si-Si interconnections;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820741
  • Filename
    4247107