DocumentCode :
982471
Title :
Contact resistance of polysilicon silicon interconnections
Author :
Reeves, Geoffrey K. ; Harrison, H.B.
Author_Institution :
Telecom Australia Research Laboratories, Clayton, Australia
Volume :
18
Issue :
25
fYear :
1982
Firstpage :
1083
Lastpage :
1085
Abstract :
Electrical contacts to poly are an important part of current silicon technology. In this letter we present a method of calculating the electrical characteristics for a planar poly to silicon contact. An interesting and significant result that is derived and discussed is a minimum contact resistance that is a strong function not only of the specific contact resistance of the contact interface but also of the contact geometry.
Keywords :
contact resistance; electrical contacts; elemental semiconductors; integrated circuit technology; large scale integration; silicon; VLSI; contact resistance; electrical contacts; integrated circuit technology; poly Si-Si interconnections;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19820741
Filename :
4247107
Link To Document :
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