Title :
A simple method to determine carrier recombinations in a semiconductor laser optical amplifier
Author :
Chu, C.Y.J. ; Ghafouri-Shiraz, H.
Author_Institution :
Fina Tech Ltd., Hong Kong
Abstract :
The contribution of nonradiative carrier recombinations to the characteristics of long-wavelength InGaAsP/InP semiconductor laser devices is verified by measuring the amplified spontaneous emission (ASE) power from a 1.5- mu m semiconductor laser amplifier (SLA) against the bias current. This method provides a simple and straightforward way to determine the mathematical form of recombination rate in a long-wavelength semiconductor laser, provided that the structural parameters of the laser are known.<>
Keywords :
III-V semiconductors; carrier mobility; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; laser theory; semiconductor lasers; superradiance; 1.5 mum; ASE power; InGaAsP-InP; InGaAsP/InP; amplified spontaneous emission; bias current; carrier recombinations; long-wavelength; nonradiative carrier recombinations; semiconductor laser optical amplifier; structural parameters; Current measurement; Indium phosphide; Power amplifiers; Power lasers; Power measurement; Radiative recombination; Semiconductor lasers; Semiconductor optical amplifiers; Spontaneous emission; Structural engineering;
Journal_Title :
Photonics Technology Letters, IEEE
