Title :
Low-threshold single quantum well (60 Ã\x85) GaAlAs lasers grown by MO-CVD with Mg as p-type dopant
Author :
Burnham, R.D. ; Streifer, W. ; Scifres, D.R. ; Lindstr¿¿m, C. ; Paoli, T.L. ; Holonyak, Nick
Author_Institution :
Xerox Palo Alto Research Centers, Palo Alto, USA
Abstract :
The letter reports low-threshold MO-CVD GaAlAs DH (~7730 Å) lasers containing Mg as the p-type dopant. The structure consists of symmetric stepped index cladding layers on both sides of a thin single quantum well (~60 Å) active region. Broad-area threshold current densities of 460 A cm¿2 and 270 A cm¿2 are achieved for cavity lengths of 250 and 500 ¿m, respectively. Broad-area room-temperature lasers without facet coatings emit in excess of 400 mW/facet CW output power.
Keywords :
III-V semiconductors; gallium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; III-V semiconductor; Mg; current density; low-threshold MO-CVD GaAlAs DH lasers; p-type dopant; single quantum well; symmetric stepped index cladding layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820748
