DocumentCode
982550
Title
High-efficiency GaAs power MESFETs prepared by ion implantation
Author
Feng, Ming ; Kanber, H. ; Eu, V.K. ; Siracusa, M.
Author_Institution
Hughes Aircraft Company, Torrance Research Center, Torrance, USA
Volume
18
Issue
25
fYear
1982
Firstpage
1097
Lastpage
1099
Abstract
GaAs power MESFETs have been fabricated using ion implantation to form channel layers. A 1 ¿m gate length by 2400 ¿m gate width device has demonstrated an output power of 1.63 W with 6.9 dB associated gain, 35% power-added efficiency and 9.7 dB linear gain at 10 GHz. The transconductance of this device is 280 mS, which corresponds to 117 mS/mm. This result demonstrates that excellent GaAs power MESFETs can be made by ion implantation, and is comparable to average results demonstrated by devices made by AsCl3 vapour phase epitaxy.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; 10 GHz; GaAs power MESFETs; III-V semiconductor; channel layers; ion implantation; linear gain; power-added efficiency; transconductance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820749
Filename
4247117
Link To Document