Title :
A proposed electroabsorption modulator at 1.55 mu m in silicon/silicon-germanium asymmetric quantum-well structures
Author :
Friedman, L. ; Soref, R.A.
Author_Institution :
Rome Air Dev. Center, Hanscom AFB, MA, USA
Abstract :
A new, fast, intersubband 1.55- mu m electrooptic modulator in the SiGe/Si/CaF/sub 2/-on-Si stepped-quantum-well system is proposed and analyzed. At applied electric fields of +or-8 V/ mu m, resonant 1-3 conduction-intersubband absorption is predicted to give 18 dB of optical extinction for narrow-linewidth transitions.<>
Keywords :
calcium compounds; electro-optical effects; electroabsorption; germanium alloys; integrated optics; optical communication equipment; optical modulation; semiconductor quantum wells; silicon; silicon alloys; 1.55 mum; Si/Si-Ge; SiGe-Si-CaF/sub 2/; SiGe/Si/CaF/sub 2/-on-Si; applied electric fields; asymmetric quantum-well structures; conduction-intersubband absorption; electroabsorption modulator; electrooptic modulator; intersubband; narrow-linewidth transitions; optical extinction; stepped-quantum-well system; Absorption; Conducting materials; Effective mass; Electrooptic modulators; Germanium silicon alloys; Optical modulation; Quantum wells; Resonance; Silicon germanium; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
