Title :
Measurement of radiative recombination coefficient and carrier leakage in 1.3 ¿m InGaAsP lasers with lightly doped active layers
Author :
Su, C.B. ; Schlafer, J. ; Manning, John ; Olshansky, R.
Author_Institution :
GTE Laboratories, Incorporated, Transmission Technology Center, Waltham, USA
Abstract :
Carrier lifetime and spontaneous emission data for InGaAsP lasers with lightly doped active layers are used to measure the carrier-dependent radiative coefficient B(n) and the leakage current due to electron drift. The Auger recombination coefficient is less than 0.1 × 10¿28 cm6/s.
Keywords :
Auger effect; III-V semiconductors; carrier lifetime; carrier mobility; gallium arsenide; indium compounds; semiconductor junction lasers; Auger recombination coefficient; III-V semiconductors; InGaAsP lasers; carrier leakage measurement; carrier lifetime; electron drift; lightly doped active layers; radiative recombination coefficient measurement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820756
